型号:

STW26NM60

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 600V 30A TO-247
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
STW26NM60 PDF
产品目录绘图 ST Series TO-247
标准包装 30
系列 MDmesh™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 30A
开态Rds(最大)@ Id, Vgs @ 25° C 135 毫欧 @ 13A,10V
Id 时的 Vgs(th)(最大) 5V @ 250µA
闸电荷(Qg) @ Vgs 102nC @ 10V
输入电容 (Ciss) @ Vds 2900pF @ 25V
功率 - 最大 313W
安装类型 通孔
封装/外壳 TO-247-3
供应商设备封装 TO-247-3
包装 管件
其它名称 497-3265-5
相关参数
PT7779N Texas Instruments REGULATOR 1.3-3.5V 32A 5VIN VRT
STW14NM50 STMicroelectronics MOSFET N-CH 550V 14A TO-247
T491C157K010AS Kemet CAP TANT 150UF 10V 10% 2312
STV160NF02LT4 STMicroelectronics MOSFET N-CH 20V 160A POWERSO-10
MCP1650DM-DDSC1 Microchip Technology BOARD DEMO FOR MCP1650 SEPIC
STV160NF02LT4 STMicroelectronics MOSFET N-CH 20V 160A POWERSO-10
L6207N STMicroelectronics IC DRVR FULL BRDG DUAL 24-PWRDIP
T491R685K006AS Kemet CAP TANT 6.8UF 6.3V 10% 0805
STT4PF20V STMicroelectronics MOSFET P-CH 20V 3A SOT-23-6
PT7777N Texas Instruments REGU 32A 1.3-3.5V 5BIT 680UF VER
ADM00352 Microchip Technology BOARD DEMO FOR MCP16301
L6205N STMicroelectronics IC DRVR FULL BRDG DUAL 20PWRDIP
T491R685K006AS Kemet CAP TANT 6.8UF 6.3V 10% 0805
PT7771N Texas Instruments REGU 32A 1.3-3.5V 5BIT VERT TH
ADM00414 Microchip Technology BOARD EVALUATION MCP16321
L6203 STMicroelectronics IC DRIVER FULL BRIDGE MULTIWATT
PT8103C Texas Instruments REG 1.075-1.85V 40A 5VIN SMD
8Y-19.200MAAJ-T TXC CORPORATION CRYSTAL 19.200 MHZ 18PF SMD
STT4PF20V STMicroelectronics MOSFET P-CH 20V 3A SOT-23-6
VND5004BTR-E STMicroelectronics IC SW HIGH SIDE DUAL 24QFPN